IP Library Assignment 018713/0604
Patent Assignment
Reel/Frame 018713/0604

Assignment of Assignor's Interest

Recorded: 2006-12-18 Pages: 3
Assignors
LEE, MIN KYU
Executed: 2004-06-02
CHANG, HEE HYUN
Executed: 2004-06-02
KIM, JUM SOO
Executed: 2004-06-02
AHN, JUNG RYUL
Executed: 2004-06-02
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-EUB, KYOUNGKI-DO, ICHEON-SI, KOREA, REPUBLIC OF
Covered Property (1)
Method of Forming Gate Oxide Layer in Semiconductor Device
Patent: 7,169,670 →
Application: 10/880,691 →
Publication: US 2005/0048723
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 6, 2006
From: HYNIX SEMICONDUCTOR INC.
To: HYNIX SEMICONDUCTOR INC.; STMICROELECTRONICS S.R.L.
Reel/Frame 018207/0057 →