Assignment of Assignor's Interest

Recorded: 2007-04-05 Pages: 2

Assignor

OHASHI, TAKUO

Executed: 2007-04-04

Assignee

ELPIDA MEMORY, INC.

2-1, YAESU 2-CHOME,, CHUO-KU, TOKYO, JAPAN

Covered Property (1)

Method for Manufacturing a Semiconductor Device Having a Nitrogen-Containing Gate Insulating Film

Patent: 8,105,959 →

Application: 11/697,050 →

Publication: US 2007/0238316

Related Assignments (2)

Other recorded transfers of the patent in this record — the chain of ownership.