IP Library Assignment 019315/0287
Patent Assignment
Reel/Frame 019315/0287

Assignment of Assignor's Interest

Recorded: 2007-05-18 Pages: 4
Assignors
NAKAMURA, KOUZO
Executed: 2006-11-22
MAEDA, SUSUMU
Executed: 2006-11-22
HAYASHIDA, KOUICHIROU
Executed: 2006-11-22
SUGIMAN, TAKAHISA
Executed: 2006-11-22
SUGISAWA, KATSUHIKO
Executed: 2006-11-22
Assignee
KOMATSU ELECTRONIC METALS CO., LTD.
25-1, SHINOMIYA 3-CHOME, HIRATSUKA-SHI, KANAGAWA, 254-0014, JAPAN
Covered Property (1)
Nitrogen Doped Silicon Wafer and Manufacturing Method Thereof
Patent: 7,875,117 →
Application: 11/573,387 →
Publication: US 2007/0218570
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Corrective Assignment to Correct the the Title Should Read: Nitrogen Doped Silicon Wafer and Manufacturing Method Thereof Previously Recorded on Reel 019315 Frame 0287. Assignor(S) Hereby Confirms the Assignment. Jun 28, 2007
From: NAKAMURA, KOUZO; MAEDA, SUSUMU; HAYASHIDA, KOUICHIROU; SUGIMAN, TAKAHISA
To: KOMATSU ELECTRONIC METALS CO., LTD.
Reel/Frame 019493/0913 →
Assignment of Assignor's Interest Nov 28, 2007
From: NAKAMURA, KOUZO; MAEDA, SUSUMU; HAYASHIDA, KOUICHIROU; SUGIMAN, TAKAHISA
To: KOMATSU ELECTRONIC METALS CO., LTD.
Reel/Frame 020203/0724 →
Change of Name Nov 12, 2010
From: KOMATSU ELECTRONIC METALS CO., LTD.
To: SUMCO TECHXIV CORPORATION
Reel/Frame 025356/0593 →