Patent Assignment
Reel/Frame 019733/0169
Assignment of Assignor's Interest
Recorded: 2007-08-22
Received: 2007-08-22
Pages: 33
Assignor
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Executed: 2007-05-18
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KRX, KOREA, REPUBLIC OF
Covered Properties
(52)
Fluid encapsulant for protecting electronics
Application:
11/602,940 →
Method and system for allocating revenue derived from use of GPS-equipped golf carts
Application:
11/406,833 →
Sensing the State of a Storage Cell Including a Magnetic Element
Application:
10/957,058 →
Magnetic Memory Having Angled Third Conductor
Application:
10/678,555 →
System and Method of Calibrating a Read Circuit in a Magnetic Memory
Application:
10/678,322 →
Magnetic Memory Device
Application:
10/676,465 →
Method for Adaptively Writing a Magnetic Random Access Memory
Application:
10/635,399 →
Method, Apparatus and System for Erasing and Writing a Magnetic Random Access Memory
Application:
10/635,405 →
Method and System for Performing Equipotential Sensing Across a Memory Array to Eliminate Leakage Currents
Application:
10/459,437 →
Method and System for Adjusting Offset Voltage
Application:
10/449,572 →
Method and System for Data Communication on a Chip
Application:
10/444,477 →
Methods for Isolating Memory Elements Within an Array
Application:
10/425,362 →
Dual-Junction Magnetic Memory Device and Read Method
Application:
10/426,381 →
Method for Constructing a Magneto-Resistive Element
Application:
10/414,325 →
System for and Method of Four-Conductor Magnetic Random Access Memory Cell and Decoding Scheme
Application:
10/346,700 →
System for and Method of Accessing a Four-Conductor Magnetic Random Access Memory
Application:
10/346,494 →
Chopper Sensor for Mram
Application:
10/314,111 →
System and Method for Sensing Memory Cells of an Array of Memory Cells
Application:
10/299,288 →
Memory Cell Sensing Integrator
Application:
10/299,501 →
Selection of Memory Cells in Data Storage Devices
Application:
10/299,542 →
Power-Saving Reading of Magnetic Memory Devices
Application:
10/293,027 →
Mram with Asymmetric Cladded Conductor
Application:
10/293,350 →
Memory Cell Sensing System and Method
Application:
10/286,081 →
Method and System for Minimizing Differential Amplifier Power Supply Sensitivity
Application:
10/286,577 →
Magnetoresistive Element Including Ferromagnetic Sublayer Having Smoothed Surface
Application:
10/285,815 →
Adjustable Current Mode Differential Amplifier for Multiple Bias Point Sensing of Mram Having Diode Isolation
Application:
10/261,532 →
Adjustable Current Mode Differential Amplifier for Multiple Bias Point Sensing of Mram Having Equi-Potential Isolation
Application:
10/262,051 →
Memory Device Capable of Calibration and Calibration Methods Therefor
Application:
10/232,363 →
Magnetic Shielding for Reducing Magnetic Interference
Application:
10/233,110 →
Adjustable Current Mode Differential Amplifier
Application:
10/198,278 →
Shared Volatile and Non-Volatile Memory
Application:
10/195,818 →
Magnetic Memory Device and Method
Application:
10/196,877 →
Magnetic Memory Element Having Controlled Nucleation Site in Data Layer
Application:
10/173,195 →
Triple Sample Sensing for Magnetic Random Access Memory (Mram) with Series Diodes
Application:
10/151,915 →
Memory Cell Isolation
Application:
10/151,914 →
Small Area Magnetic Memory Devices
Application:
10/147,597 →
Resistive Cross Point Memoryarrays Having a Charge Injection Differential Sense Amplifier
Application:
10/136,782 →
Resistive Cross Point Memeory Cell Arrays Having a Cross-Couple Latch Sense Amplifier
Application:
10/136,976 →
Magneto Resistive Storage Device Having a Magnetic Field Sink Layer
Application:
10/135,241 →
Method of Fabricating High Density Sub-Lithographic Features on a Substrate
Application:
10/135,900 →
Diode for Use in Mram Devices and Method of Manufacture
Application:
10/098,206 →
Magneto Resistive Storage Device Having Double Tunnel Junction
Application:
10/098,204 →
Memory Device Array Having a Pair of Magnetic Bits Sharing a Common Conductor Line
Application:
10/098,903 →
Magnetoresistive Solid-State Storage Device and Data Storage Methods for Use Therewith
Application:
10/093,832 →
Manufacturing Test for a Fault Tolerant Magnetoresistive Solid-State Storage Device
Application:
10/093,851 →
Allocation of Sparing Resources in a Magnetoresistive Solid-State Storage Device
Application:
10/093,833 →
Method for Error Correction Decoding in an Mram Device (Historical Erasures)
Application:
10/093,854 →
Synthetic Ferrimagnet Reference Layer for a Magnetic Storage Device
Application:
10/093,344 →
Method and System for Performing Equipotential Sensing Across a Memory Array to Eliminate Leakage Currents
Application:
10/084,111 →
A Shared Global Word Line Magnetic Random Access Memory
Application:
10/079,311 →
Data Balancing Scheme in Solid State Storage Devices
Application:
09/959,591 →
Integrated Digitizing Tablet and Color Display Apparatus and Method of Operation
Application:
10/037,028 →