IP Library Assignment 019829/0623
Patent Assignment
Reel/Frame 019829/0623

Assignment of Assignor's Interest

Recorded: 2007-09-14 Pages: 3
Assignor
CHANG, HEON YONG
Executed: 2007-08-30
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-EUB, ICHEON-SI, KYOUNGKI-DO, KOREA, REPUBLIC OF
Covered Property (1)
Method for Manufacturing Phase Change Memory Device Which Can Stably Form an Interface Between a Lower Electrode and a Phase Change Layer
Patent: 7,687,310 →
Application: 11/855,664 →
Publication: US 2008/0131994
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name May 6, 2024
From: HYNIX-SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067328/0814 →
Assignment of Assignor's Interest May 9, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067369/0832 →
Corrective Assignment to Correct the Assignee Is Hynix Semiconductor Inc. Not Hynix-Semiconductor Inc. There Is No Hyphen in the Name. Previously Recorded on Reel 67328 Frame 814. Assignor(S) Hereby Confirms the Change of Name. May 14, 2024
From: HYNIX SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067412/0482 →