Patent Assignment
Reel/Frame 020050/0291
Assignment of Assignor's Interest
Recorded: 2007-10-23
Pages: 2
Assignors
LEDYAEV, OLEG
Executed: 2007-09-11
PARK, KI HO
Executed: 2007-09-14
LEE, SI HYUK
Executed: 2007-09-11
LEE, SOO MIN
Executed: 2007-09-12
Assignee
SAMSUNG ELECTRONICS CO., LTD.
314, MAETAN3-DONG, YEONGTONG-GU, SUWON, GYUNGGI-DO, KOREA, REPUBLIC OF
Covered Property
(1)
Method of Growing Iii Group Nitride Single Crystal and Iii Group Nitride Single Crystal Manufactured by Using the Same
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.