Patent Assignment
Reel/Frame 020915/0956
Assignment of Assignor's Interest
Recorded: 2008-04-30
Pages: 3
Assignors
RHEE, HWA-SUNG
Executed: 2004-09-23
KIM, HYUN-SUK
Executed: 2004-09-23
TETSUJI, UENO
Executed: 2004-09-23
YOO, JAE-YOON
Executed: 2004-09-23
LEE, SEUNG-HWAN
Executed: 2004-09-23
LEE, HO
Executed: 2004-09-23
PARK, MOON-HAN
Executed: 2004-09-30
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Property
(1)
Method of Forming an at Least Penta-Sided-Channel Type of Finfet Transistor