Patent Assignment
Reel/Frame 021483/0597
Assignment of Assignor's Interest
Recorded: 2008-09-04
Pages: 2
Assignor
FUKASAKU, KATSUHIKO
Executed: 2008-07-16
Assignee
SONY CORPORATION
1-7-1 KONAN, MINATO-KU, TOKYO 108-0075, JAPAN
Covered Property
(1)
Semiconductor Device with Forwardly Tapered P-Type Fet Gate Electrode and Reversely Tapered N-Type Fet Gate Electrode and Method of Manufacturing Same