Semiconductor device with forwardly tapered P-type FET gate electrode and reversely tapered N-type FET gate electrode and method of manufacturing same
Disclosed herein is a semiconductor device including a semiconductor substrate provided with an N-type FET and P-type FET, with a gate electrode of the N-type FET and a gate electrode of the P-type FET having undergone full-silicidation, wherein the gate electrode of the P-type FET has such a sectional shape in the gate length direction that the gate length decreases as one goes upwards from a surface of the semiconductor substrate, and the gate electrode of the N-type FET has such a sectional shape in the gate length direction that the gate length increases as one goes upwards from the surface of the semiconductor substrate.
1. A semiconductor device comprising a semiconductor substrate with an N-type field effect transistor and a P-type field effect transistor, a gate electrode of said N-type field effect transistor and a gate electrode of said P-type field effect transistor having undergone full-silicidation,
wherein,
said gate electrode of said P-type field effect transistor has such a sectional shape in a gate length direction thereof that the gate length of said P-type field effect transistor decreases proceeding upwards from a surface of said semiconductor substrate, and
said gate electrode of said N-type field effect transistor has such a sectional shape in a gate length direction that the gate length of said N-type field effect transistor increases proceeding upwards from the surface of said semiconductor substrate.
2. A semiconductor device comprising a semiconductor substrate with an N-type field effect transistor and a P-type field effect transistor, a gate electrode of said N-type field effect transistor and a gate electrode of said P-type field effect transistor having undergone full-silicidation,
wherein,
said gate electrode of said P-type field effect transistor has a section having a forwardly tapered shape in relation to a surface of said semiconductor substrate, and
said gate electrode of said N-type field effect transistor has a section having a reversely tapered shape in relation to the surface of said semiconductor substrate.
3. The semiconductor device as set forth in claim 1 , wherein said gate electrode of said P-type field effect transistor includes Ni 3 Si.
4. The semiconductor device as set forth in claim 1 , wherein said gate electrode of said N-type field effect transistor includes NiSi 2 .