Assignment of Assignor's Interest

Recorded: 2008-09-04 Pages: 2

Assignor

UDAGAWA, TAKASHI

Executed: 2008-08-19

Assignee

SHOWA DENKO K.K.

13-9, SHIBA DAIMON 1-CHOME, MINATO-KU, TOKYO, 105-8518, JAPAN

Covered Property (1)

Method for Production of Silicon Carbide Layer, Gallium Nitride Semiconductor Device and Silicon Substrate

Patent: 8,216,367 →

Application: 11/921,929 →

Publication: US 2009/0045412

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.