IP Library Assignment 021511/0062
Patent Assignment
Reel/Frame 021511/0062

Merger

Recorded: 2008-09-11 Pages: 11
Assignor
Assignee
ADVANCED SEMICONDUCTOR ENGINEERING, INC.
26 CHIN 3RD RD., NANTZE EXPORT PROCESSING ZONE, KAO-HSIUNG CITY, TAIWAN
Covered Property (1)
Method of Drilling a Circuit Substrate
Patent: 6,754,951 →
Application: 09/920,543 →
Publication: US 2002/0035785
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jul 31, 2001
From: HO, SHENG-CHUN; HSIAO, MIN-LIANG
To: ADVANCED SEMICONDUCTOR ENGINEERING MATERIAL, INC.; ADVANCED SEMICONDUCTOR ENGINEERING, INC.
Reel/Frame 012644/0476 →
Assignment of Assignor's Interest Mar 28, 2002
From: HO, SHENG-CHUN; HSIAO, MIN-LIANG
To: ADVANCED SEMICONDUCTOR ENGINEERING MATERIAL, INC.; ADVANCED SEMICONDUCTOR ENGINEERING, INC.
Reel/Frame 012765/0054 →
Assignment of Assignor's Interest Sep 11, 2008
From: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
To: ASE (SHANGHAI) INC.
Reel/Frame 021518/0063 →