IP Library Assignment 021599/0354
Patent Assignment
Reel/Frame 021599/0354

Assignment of Assignor's Interest

Recorded: 2008-09-29 Pages: 4
Assignors
ANDO, YUJI
Executed: 2008-08-29
MIYAMOTO, HIRONOBU
Executed: 2008-08-29
NAKAYAMA, TATSUO
Executed: 2008-08-29
OKAMOTO, YASUHIRO
Executed: 2008-08-29
INOUE, TAKASHI
Executed: 2008-08-29
MURASE, YASUHIRO
Executed: 2008-08-29
OTA, KAZUKI
Executed: 2008-08-29
WAKEJIMA, AKIO
Executed: 2008-08-29
Assignee
NEC CORPORATION
7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, 108-8001, JAPAN
Covered Property (1)
Field Effect Transistor with Reduced Gate Leakage Current
Patent: 8,198,652 →
Application: 12/295,004 →
Publication: US 2010/0224910
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jul 12, 2013
From: NEC CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 030784/0197 →
Change of Address Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
Assignment of Assignor's Interest Dec 18, 2017
From: RENESAS ELECTRONICS CORPORATION
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 044415/0951 →