Patent Assignment
Reel/Frame 021712/0631
Assignment of Assignor's Interest
Recorded: 2008-10-21
Pages: 4
Assignors
ISHIKAWA, MIZUE
Executed: 2008-08-27
SAITO, YOSHIAKI
Executed: 2008-08-27
SUGIYAMA, HIDEYUKI
Executed: 2008-08-27
INOKUCHI, TOMOAKI
Executed: 2008-08-27
Assignee
KABUSHIKI KAISHA TOSHIBA
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, 105-8001, JAPAN
Covered Property
(1)
Spin Mos Field Effect Transistor and Tunneling Magnetoresistive Effect Element Using Stack Having Heusler Alloy
Related Assignments
(3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Sep 11, 2019
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 050339/0573 →
Merger and Change of Name
Sep 13, 2019
From: TOSHIBA MEMORY CORPORATION; K. K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 050494/0645 →
Change of Name and Address
Apr 20, 2020
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 052436/0702 →