IP Library Assignment 052436/0702
Patent Assignment
Reel/Frame 052436/0702

Change of Name and Address

Recorded: 2020-04-20 Pages: 98
Assignor
TOSHIBA MEMORY CORPORATION
Executed: 2019-10-01
Assignee
KIOXIA CORPORATION
1-21, SHIBAURA 3-CHOME, MINATO-KU,, TOKYO,, JAPAN
Covered Properties (25)
Semiconductor Device with a Binary Alloy Bonding Layer
Patent: 6,583,514 →
Application: 09/969,657 →
Publication: US 2002/0090756
Semiconductor Device and Method of Manufacturing the Same
Patent: 6,995,455 →
Application: 10/670,557 →
Publication: US 2004/0106335
A Semiconductor Wafer and Method of Manufacturing a Semiconductor Device Using a Separation Portion on a Peripheral Area of the Semiconductor Wafer
Patent: 7,195,988 →
Application: 10/751,657 →
Publication: US 2005/0023647
Three-Dimensionally Mounted Semiconductor Module and Three-Dimensionally Mounted Semiconductor System
Patent: 7,015,572 →
Application: 10/864,512 →
Publication: US 2004/0251530
Method of Generating Writing Pattern Data of Mask and Method of Writing Mask
Patent: 7,704,645 →
Application: 11/068,904 →
Publication: US 2005/0214657
Semiconductor Wafer Having a Separation Portion on a Peripheral Area
Patent: 7,709,932 →
Application: 11/245,059 →
Publication: US 2006/0038260
Semiconductor Device and Method of Manufacturing the Same
Patent: 7,452,751 →
Application: 11/281,727 →
Publication: US 2006/0084258
Semiconductor Device with a Sige Layer Having Uniaxial Lattice Strain
Patent: 7,592,646 →
Application: 11/389,534 →
Publication: US 2006/0267046
Element Fabrication Substrate
Patent: 7,557,018 →
Application: 11/510,745 →
Publication: US 2006/0292835
Semiconductor Device and Manufacturing Method Thereof
Patent: 8,008,751 →
Application: 11/950,716 →
Publication: US 2008/0135886
Spin Mos Field Effect Transistor and Tunneling Magnetoresistive Effect Element Using Stack Having Heusler Alloy
Patent: 7,709,867 →
Application: 12/194,797 →
Publication: US 2009/0050948
Reflective-Type Mask
Patent: 7,960,076 →
Application: 12/329,126 →
Publication: US 2009/0148781
Manufacturing Method of Semiconductor Device and Manufacturing Method of Mask
Patent: 8,435,702 →
Application: 12/563,265 →
Publication: US 2010/0080647
Spin Mos Field Effect Transistor and Tunneling Magnetoresistive Effect Element Using Stack Having Heusler Alloy
Patent: 7,943,974 →
Application: 12/662,100 →
Publication: US 2010/0187585
Reflection-Type Exposure Mask and Method of Manufacturing a Semiconductor Device
Patent: 8,173,332 →
Application: 12/749,250 →
Publication: US 2011/0020737
Mask Defect Measurement Method, Mask Quality Determination Method, and Manufacturing Method of Semiconductor Device
Patent: 8,384,888 →
Application: 12/750,396 →
Publication: US 2011/0043811
Semiconductor Device and Method of Manufacturing the Same
Patent: 8,492,793 →
Application: 12/888,805 →
Publication: US 2011/0210375
Reflective Exposure Mask, Method of Fabricating Reflective Exposure Mask, Method of Inspecting Reflective Exposure Mask, and Method of Cleaning Reflective Exposure Mask
Patent: 8,535,854 →
Application: 12/972,804 →
Publication: US 2011/0151358
Semiconductor Device and Manufacturing Method Thereof
Patent: 8,174,095 →
Application: 13/037,049 →
Publication: US 2011/0147805
Mask Defect Inspection Method and Defect Inspection Apparatus
Patent: 8,699,783 →
Application: 13/230,030 →
Publication: US 2012/0063667
Semiconductor Device and Method of Manufacturing the Same
Patent: 8,766,236 →
Application: 13/236,182 →
Publication: US 2012/0168830
Method of Manufacturing Semiconductor Device Having Pre-Silicide Nitrogen Implant
Patent: 8,679,961 →
Application: 13/336,307 →
Publication: US 2012/0164800
Mask Inspection Method and Mask Inspection Apparatus
Patent: 8,797,524 →
Application: 13/403,105 →
Publication: US 2012/0218543
Semiconductor Device and Method of Manufacturing the Same
Patent: 8,574,993 →
Application: 13/422,985 →
Publication: US 2012/0175705
Method of Correcting Defects in a Reflection-Type Mask and Mask-Defect Correction Apparatus
Patent: 9,164,371 →
Application: 13/423,644 →
Publication: US 2012/0307218
Related Assignments (13)
Other recorded transfers of the patents in this record — the chain of ownership.
Merger Sep 1, 2010
From: RENESAS TECHNOLOGY CORP.
To: NEC ELECTRRONICS CORPORATION
Reel/Frame 024933/0869 →
Change of Name Sep 1, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024953/0404 →
Corrective Assignment to Correct the Assignees Previously Recorded on Reel 012670 Frame 0806. Assignor(S) Hereby Confirms the Assignees. Mar 27, 2014
From: TAGO, MASAMOTO; TOMITA, YOSHIHIRO; TAKAHASHI, KENJI
To: NEC CORPORATION; MITSUBISHI DENKI KABUSHIKI KAISHA; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 032537/0677 →
Merger Mar 31, 2014
From: RENESAS TECHNOLOGY CORPORATION
To: NEC ELECTRONICS CORPORATION
Reel/Frame 032568/0589 →
Change of Name Apr 7, 2014
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 032613/0379 →
Assignment of Assignor's Interest Apr 22, 2014
From: NEC CORPORATION; RENESAS ELECTRONICS CORPORATION; KABUSHIKI KAISHA TOSHIBA
To: RENESAS ELECTRONICS CORPORATION; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 032724/0541 →
Merger and Change of Name May 23, 2014
From: RENESAS TECHNOLOGY CORP.; NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 032954/0181 →
Change of Address Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
Merger Aug 20, 2019
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 050095/0092 →
Split and General Succession Aug 20, 2019
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 050095/0076 →
Change of Name and Address Aug 20, 2019
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 050095/0097 →
Assignment of Assignor's Interest Sep 11, 2019
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 050339/0573 →
Merger and Change of Name Sep 13, 2019
From: TOSHIBA MEMORY CORPORATION; K. K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 050494/0645 →