Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device according to an embodiment includes: a substrate; a first semiconductor layer formed on the substrate and having a strain; a second and a third semiconductor layers formed at a distance from each other on the first semiconductor layer, and having a different lattice constant from a lattice constant of the first semiconductor layer; a gate insulating film formed on a first portion of the first semiconductor layer, the first portion being located between the second semiconductor layer and the third semiconductor layer; and a gate electrode formed on the gate insulating film. At least one of outer surface regions of the second semiconductor layer and a second portion of the first semiconductor layer is a first silicide region, and at least one of outer surface regions of the third semiconductor layer and a third portion of the first semiconductor layer is a second silicide region, the second and third portions being located immediately below the second and third semiconductor layers respectively.
1. A semiconductor device comprising:
a substrate;
a first semiconductor layer provided on the substrate and having a strain, the first semiconductor layer being a single layer;
second and third semiconductor layers provided at a distance from each other on the first semiconductor layer, and having a different lattice constant from a lattice constant of the first semiconductor layer;
a gate insulating film provided on a first portion of the first semiconductor layer, the first portion being located between the second semiconductor layer and the third semiconductor layer and including a channel; and
a gate electrode provided on the gate insulating film,
wherein:
the first semiconductor layer is a Si layer and the second and third semiconductor layers are SiGe layers, or the first semiconductor layer is a SiGe layer and the second and third semiconductor layers are Si layers,
an outer surface region of the second semiconductor layer and a side face region of a second portion of the first semiconductor layer are first silicide regions, the second portion of the first semiconductor layer being located immediately below the second semiconductor layer, and the side face region of the second portion being of the first semiconductor layer a different region from an upper surface of the second portion of the first semiconductor layer,
an outer surface region of the third semiconductor layer and a side face region of a third portion of the first semiconductor layer are second silicide regions, the third portion of the first semiconductor layer being located immediately below the third semiconductor layer, and the side face region of the third portion being of the first semiconductor layer a different region from an upper surface of the third portion of the first semiconductor layer, and
a silicide region that contains Ge and is included in the first and second silicide regions has a Ge concentration of 50 atomic % or higher.
2. The device according to claim 1 , wherein the first semiconductor layer is provided in a mesa-like shape on the substrate.
3. The device according to claim 1 , wherein the second and third semiconductor layers have a thermal expansion coefficient larger than a thermal expansion coefficient of the first semiconductor layer by 3% or more.
4. The device according to claim 1 , wherein the first semiconductor layer is a strained Si layer, and the second and third semiconductor layers are SiGe layers.
5. The device according to claim 1 , wherein a size of the first semiconductor layer is 1 μm or smaller and the size of the first semiconductor layer being a maximum distance between two points on a circumference of the first semiconductor layer.
6. The device according to claim 1 , wherein an insulating layer is provided between the first semiconductor layer and the substrate.