Patent Assignment
Reel/Frame 021754/0261
Security Agreement
Recorded: 2008-10-29
Received: 2008-10-29
Pages: 12
Assignor
SILICON SEMICONDUCTOR CORPORATION
Executed: 2008-10-27
Assignees
ACADEMY VENTURE FUND, LLC
P. O. BOX 99748, RALEIGH, NC, 27624, UNITED STATES
ACADEMY CENTENNIAL FUND, LLC
P. O. BOX 99748, RALEIGH, NC, 27624, UNITED STATES
ACADEMY VENTURES, LLC
P. O. BOX 99748, RALEIGH, NC, 27624, UNITED STATES
ACADEMY CENTENNIAL MANAGEMENT, LLC
P. O. BOX 99748, RALEIGH, NC, 27624, UNITED STATES
Covered Properties
(11)
Polycrystalline Silicon Film Containing Ni
Application:
11/491,227 →
Methods of Forming Power Semiconductor Devices Having Laterally Extending Base Shielding Regions
Application:
10/936,757 →
Integrated Circuit Power Devices Having Junction Barrier Controlled Schottky Diodes Therein
Application:
10/671,333 →
Methods of Forming Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes
Application:
10/621,668 →
Bi-Directional Driving Circuit for Liquid Crystal Display Device
Application:
10/453,651 →
Vertical Power Devices Having Retrograded-Doped Transition Regions Therein
Application:
10/199,583 →
Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes and Methods of Forming Same
Application:
09/995,019 →
Vertical Power Devices Having Insulated Source Electrodes in Discontinuous Deep Trenches
Application:
09/991,838 →
Packaged Power Devices Having Vertical Power Mosfets Therein That Are Flip-Chip Mounted to Slotted Gate Electrode Strip Lines
Application:
09/992,233 →
Power Semiconductor Devices Having Laterally Extending Base Shielding Regions That Inhibit Base Reach-Through
Application:
10/008,171 →
Power Devices Having Retrograded-Doped Transition Regions and Insulated Trench-Based Electrodes Therein
Application:
09/833,132 →