Patent Assignment
Reel/Frame 021863/0764
Assignment of Assignor's Interest
Recorded: 2008-11-19
Pages: 4
Assignors
LIN, WEN-PIN
Executed: 2008-11-06
SHEU, SHYH-SHYUAN
Executed: 2008-11-06
LIN, LIEH-CHIU
Executed: 2008-11-06
CHIANG, PEI-CHIA
Executed: 2008-11-06
Assignees
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
NO. 195, SEC. 4, CHUNG HSING ROAD, CHUTUNG, HSINCHU, 31040, TAIWAN
POWERCHIP SEMICONDUCTOR CORP.
NO. 12, LI-HSIN RD. I, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, R.O.C., TAIWAN
NANYA TECHNOLOGY CORPORATION
HWA-YA TECHNOLOGY PARK 669, FUHSING 3 RD., KUEISHAN, TAOYUAN, R.O.C., TAIWAN
PROMOS TECHNOLOGIES INC.
3F., NO. 19, LI HSIN RD., OF SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, R.O.C., TAIWAN
WINBOND ELECTRONICS CORP.
NO. 4, CREATION RD. III, SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, R.O.C., TAIWAN
Covered Property
(1)
Memory and Method for Dissipation Caused by Current Leakage
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Mar 28, 2010
From: POWERCHIP SEMICONDUCTOR CORP.; NANYA TECHNOLOGY CORPORATION; PROMOS TECHNOLOGIES INC.; WINBOND ELECTRONICS CORP.
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Reel/Frame 024149/0102 →
Assignment of Assignor's Interest
Dec 12, 2011
From: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
To: HIGGS OPL. CAPITAL LLC
Reel/Frame 027364/0397 →