IP Library Assignment 021888/0984
Patent Assignment
Reel/Frame 021888/0984

Assignment of Assignor's Interest

Recorded: 2008-11-25 Pages: 3
Assignor
YEONG, SAI HOOI
Executed: 2008-11-04
Assignee
NATIONAL UNIVERSITY OF SINGAPORE
10 KENT RIDGE CRESCENT, SINGAPORE, 119260, SINGAPORE
Covered Property (1)
Method for Forming a Shallow Junction Region Using Defect Engineering and Laser Annealing
Patent: 7,888,224 →
Application: 12/271,262 →
Publication: US 2010/0124809
Related Assignments (6)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Nov 25, 2008
From: PEY, KIN LEONG
To: NANYANG TECHNOLOGICAL UNIVERSITY
Reel/Frame 021888/0880 →
Assignment of Assignor's Interest Nov 25, 2008
From: ONG, KUANG KIAN; CHAN, LAP; CHONG, YUNG FU
To: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
Reel/Frame 021889/0146 →
Change of Name Aug 9, 2011
From: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
To: CHARTERED SEMICONDUCTOR MANUFACTURING PTE. LTD.
Reel/Frame 026723/0879 →
Change of Name Aug 9, 2011
From: CHARTERED SEMICONDUCTOR MANUFACTURING PTE. LTD.
To: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
Reel/Frame 026723/0908 →
Security Agreement Nov 27, 2018
From: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
To: WILMINGTON TRUST, NATIONAL ASSOCIATION
Reel/Frame 047660/0203 →
Release of Security Interest Nov 19, 2020
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
Reel/Frame 054481/0673 →