Patent Assignment
Reel/Frame 021930/0359
Assignment of Assignor's Interest
Recorded: 2008-12-05
Pages: 3
Assignee
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
161 GAJEONG-DONG, YUSEONG-GU, DAEJEON, KOREA, REPUBLIC OF
Covered Property
(1)
Method for Manufacturing N-Type and P-Type Chalcogenide Material, Doped Homojunction Chalcogenide Thin Film Transistor and Method of Fabricating the Same