Assignment of Assignor's Interest

Recorded: 2008-12-16 Pages: 2

Assignor

SAITOU, FUMITOSHI

Executed: 2008-12-11

Assignee

NEC ELECTRONICS CORPORATION

1753 SHIMONUMABE, NAKAHARA-KU, KAWASAKI, KANAGAWA, 211-8668, JAPAN

Covered Property (1)

Method and Apparatus of Circuit Simulation of High-Withstand-Voltage Mos Transistor

Application: 12/336,012 →

Publication: US 2009/0164196

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.