Patent Assignment
Reel/Frame 022804/0659
Change of Name
Recorded: 2009-06-10
Received: 2009-06-10
Pages: 3
Assignor
HITACHI VLSI ENGINEERING CORPORATION
Executed: 1993-08-21
Assignee
HITACHI ULSI ENGINEERING CORPORATION
20-1 JOSUIHON-CHO 5-CHOME, KODAIRA-SHI, TOKYO, JPX, JAPAN
Covered Properties
(9)
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
12/007,336 →
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
11/714,867 →
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
11/330,220 →
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
11/101,504 →
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
10/683,260 →
Semiconductor Integrated Circuit Device, Process for Fabricating the Same, and Apparatus for Fabricating the Same
Application:
10/376,329 →
Semiconductor Device Formed in a Rectangle Region on a Semiconductor Substrate Including a Voltage Generating Circuit
Application:
10/254,980 →
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
10/000,032 →
Semiconductor Intergrated Circuit Device Having a First Wiring Strip Exposed Through a Connecting Hole, a Transition-Metal Film in the Connecting Hole and an Aluminum Wiring Strip Thereover, and a Transition-Metal Nitride Film Between the Aluminum Wiring Strip And
Application:
09/899,921 →