IP Library Assignment 022896/0001
Patent Assignment
Reel/Frame 022896/0001

Assignment of Assignor's Interest

Recorded: 2009-06-16 Pages: 7
Assignors
TOH, ENG HUAT
Executed: 2009-06-11
TAN, CHUNG FOONG
Executed: 2009-06-11
TAN, SHYUE SENG
Executed: 2009-06-11
LEE, JAE GON
Executed: 2009-06-11
QUEK, ELGIN
Executed: 2009-06-11
Assignee
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
60 WOODLAND INDUSTRIAL PARK D, STREET 2, SINGAPORE, 738406, SINGAPORE
Covered Property (1)
Non-Volatile Memory Utilizing Impact Ionization and Tunnelling and Method of Manufacturing Thereof
Patent: 8,750,037 →
Application: 12/456,440 →
Publication: US 2010/0315884
Related Assignments (4)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Jun 2, 2010
From: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
To: CHARTERED SEMICONDUCTOR MANUFACTURING PTE. LTD.
Reel/Frame 024476/0268 →
Change of Name Jun 2, 2010
From: CHARTERED SEMICONDUCTOR MANUFACTURING PTE. LTD.
To: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
Reel/Frame 024476/0275 →
Security Agreement Nov 27, 2018
From: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
To: WILMINGTON TRUST, NATIONAL ASSOCIATION
Reel/Frame 047660/0203 →
Release of Security Interest Nov 19, 2020
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
Reel/Frame 054481/0673 →