IP Library › Assignment 023606/0390
Patent Assignment
Reel/Frame 023606/0390

Change of Name

Recorded: 2009-12-04 Pages: 20
Assignor
Assignee
IMEC
KAPELDREEF 75, LEUVEN, 3001, BELGIUM
Covered Properties (3)
Methods for Forming Metal-Germanide Layers and Devices Obtained Thereby
Patent: 8,354,344 →
Application: 12/201,948 →
Publication: US 2009/0085167
Non-Volatile Memory Device with Improved Immunity to Erase Saturation and Method for Manufacturing Same
Application: 12/275,888 →
Publication: US 2009/0134453
Multiple Layer Floating Gate Non-Volatile Memory Device
Patent: 7,906,806 →
Application: 12/327,394 →
Publication: US 2009/0140317
Related Assignments (4)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Dec 15, 2008
From: BRUNCO, DAVID; MEURIS, MARC
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC)
Reel/Frame 021980/0363 →
Assignment of Assignor's Interest Dec 17, 2008
From: GOVOREANU, BOGDAN; YU, HONGYU; CHO, HAG-JU
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC); SAMSUNG ELECTRONICS CO. LTD.
Reel/Frame 021996/0057 →
Assignment of Assignor's Interest Feb 12, 2009
From: ROSMEULEN, MAARTEN
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC)
Reel/Frame 022247/0807 →
Corrective Assignment to Correct the Country for Assignee Samsung Electronics Co. Ltd. Previously Recorded on Reel 021996 Frame 0057. Assignor(S) Hereby Confirms the Country for Assignee Samsung Electronics Co. Ltd. Is Republic of Korea. Jul 15, 2009
From: GOVOREANU, BOGDAN; YU, HONGYU; CHO, HAG-JU
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC); SAMSUNG ELECTRONICS CO. LTD.
Reel/Frame 022961/0281 →