IP Library Assignment 023831/0463
Patent Assignment
Reel/Frame 023831/0463

Assignment of Assignor's Interest

Recorded: 2010-01-22 Pages: 4
Assignors
YAMAMOTO, KATSUHIKO
Executed: 2009-11-17
TERASAKI, TADASHI
Executed: 2009-11-17
YONAMOTO, YOSHIKI
Executed: 2009-11-11
HAMAMURA, HIROTAKA
Executed: 2009-11-17
Assignee
HITACHI KOKUSAI ELECTRIC INC.
14-1, SOTOKANDA 4-CHOME, CHIYODA-KU, TOKYO, 1018980, JAPAN
Covered Property (1)
Method of Fabricating Non-Volatile Semiconductor Memory Device by Using Plasma Film-Forming Method and Plasma Nitridation
Patent: 8,084,315 →
Application: 12/622,816 →
Publication: US 2010/0123183
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Dec 31, 2018
From: HITACHI KOKUSAI ELECTRIC INC.
To: KOKUSAI ELECTRIC CORPORATION
Reel/Frame 048008/0206 →