IP Library Assignment 024056/0399
Patent Assignment
Reel/Frame 024056/0399

Assignment of Assignor's Interest

Recorded: 2010-03-10 Pages: 8
Assignors
MOMOSE, KENJI
Executed: 2010-03-03
ODAWARA, MICHIYA
Executed: 2010-03-03
MATSUZAWA, KEIICHI
Executed: 2010-03-03
OKUMURA, HAJIME
Executed: 2010-03-03
KOJIMA, KAZUTOSHI
Executed: 2010-03-03
ISHIDA, YUUKI
Executed: 2010-03-03
TSUCHIDA, HIDEKAZU
Executed: 2010-03-03
KAMATA, ISAHO
Executed: 2010-03-03
Assignees
SHOWA DENKO K.K.
13-9, SHIBADAIMON 1-CHOME, MINATO-KU, TOKYO, 105-8518, JAPAN
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
3-1, KASUMIGASEKI 1-CHOME, CHIYODA-KU, TOKYO, 100-8921, JAPAN
CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
1-6-1, OTEMACHI, CHIYODA-KU, TOKYO, 100-8126, JAPAN
Covered Property (1)
Epitaxial Sic Single Crystal Substrate and Method of Manufacture of Epitaxial Sic Single Crystal Substrate
Patent: 8,293,623 →
Application: 12/677,255 →
Publication: US 2011/0006309
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jul 18, 2019
From: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY; CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
To: SHOWA DENKO K.K.
Reel/Frame 049784/0229 →
Change of Name Jun 23, 2023
From: SHOWA DENKO K.K.
To: RESONAC CORPORATION
Reel/Frame 064082/0513 →
Change of Address Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →