Patent Assignment
Reel/Frame 049784/0229
Assignment of Assignor's Interest
Recorded: 2019-07-18
Pages: 3
Assignors
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Executed: 2019-04-15
CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
Executed: 2019-04-15
Assignee
SHOWA DENKO K.K.
13-9, SHIBADAIMON 1-CHOME, MINATO-KU,, TOKYO, 105-8515, JAPAN
Covered Properties
(2)
Epitaxial Sic Single Crystal Substrate and Method of Manufacture of Epitaxial Sic Single Crystal Substrate
EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Mar 10, 2010
From: MOMOSE, KENJI; ODAWARA, MICHIYA; MATSUZAWA, KEIICHI; OKUMURA, HAJIME
To: SHOWA DENKO K.K.; NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY; CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
Reel/Frame 024056/0399 →
Change of Name
Jun 23, 2023
From: SHOWA DENKO K.K.
To: RESONAC CORPORATION
Reel/Frame 064082/0513 →
Change of Address
Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →