IP Library › Assignment 024061/0347
Patent Assignment
Reel/Frame 024061/0347

Assignment of Assignor's Interest

Recorded: 2010-03-10 Pages: 6
Assignors
POWERCHIP SEMICONDUCTOR CORP.
Executed: 2009-12-03
NANYA TECHNOLOGY CORPORATION
Executed: 2009-12-03
PROMOS TECHNOLOGIES INC.
Executed: 2009-12-03
WINBOND ELECTRONICS CORP.
Executed: 2009-12-03
Assignee
PROMOS TECHNOLOGIES INC.
3F, NO. 19, LI HSIN RD., SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, TAIWAN
Covered Properties (3)
Phase Change Memory Device
Patent: 7,732,801 →
Application: 11/797,730 →
Publication: US 2008/0164454
Phase-change memory and fabrication method thereof
Application: 12/010,885 →
Publication: US 2008/0203374
Phase Change Memory Device and Fabricating Method
Patent: 7,851,253 →
Application: 12/292,508 →
Publication: US 2009/0081825
Related Assignments (2)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest May 7, 2007
From: CHEN, WEI-SU
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE; POWERCHIP SEMICONDUCTOR CORP.; NANYA TECHNOLOGY CORPORATION; PROMOS TECHNOLOGIES INC.
Reel/Frame 019338/0316 →
Assignment of Assignor's Interest May 13, 2008
From: CHUO, YEN; HSU, HONG-HUI
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE; POWERCHIP SEMICONDUCTOR CORP.; NANYA TECHNOLOGY CORPORATION; PROMOS TECHNOLOGIES INC.
Reel/Frame 020943/0344 →