Patent Assignment
Reel/Frame 024492/0401
Assignment of Assignor's Interest
Recorded: 2010-06-07
Received: 2010-06-08
Pages: 8
Assignors
ACADEMY CENTENNIAL FUND, LLC
Executed: 2010-02-12
ACADEMY CENTENNIAL MANAGEMENT, LLC
Executed: 2010-02-12
ACADEMY VENTURE FUND, LLC
Executed: 2010-02-12
ACADEMY VENTURES, LLC
Executed: 2010-02-12
Assignee
SILICON SEMICONDUCTOR CORPORATION
14460 NEW FALLS OF NEUSE ROAD, SUITE 149-273, RALEIGH, NC, 27614, UNITED STATES
Covered Properties
(12)
Catalyst and method for reducing nitrogen oxides in exhaust streams with hydrocarbons or alcohols
Application:
11/363,301 →
Single Data Line Sensing Scheme for Tcct-Based Memory Cells
Application:
10/977,309 →
Methods of Forming Power Semiconductor Devices Having Laterally Extending Base Shielding Regions
Application:
10/936,757 →
Integrated Circuit Power Devices Having Junction Barrier Controlled Schottky Diodes Therein
Application:
10/671,333 →
Methods of Forming Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes
Application:
10/621,668 →
Liquid Crystal Module Mounting Structure and Mobile Terminal Mounted with the Same
Application:
10/314,243 →
Vertical Power Devices Having Retrograded-Doped Transition Regions Therein
Application:
10/199,583 →
Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes and Methods of Forming Same
Application:
09/995,019 →
Vertical Power Devices Having Insulated Source Electrodes in Discontinuous Deep Trenches
Application:
09/991,838 →
Packaged Power Devices Having Vertical Power Mosfets Therein That Are Flip-Chip Mounted to Slotted Gate Electrode Strip Lines
Application:
09/992,233 →
Power Semiconductor Devices Having Laterally Extending Base Shielding Regions That Inhibit Base Reach-Through
Application:
10/008,171 →
Power Devices Having Retrograded-Doped Transition Regions and Insulated Trench-Based Electrodes Therein
Application:
09/833,132 →