IP Library Assignment 025538/0129
Patent Assignment
Reel/Frame 025538/0129

Assignment of Assignor's Interest

Recorded: 2010-12-27 Pages: 2
Assignor
FUMITAKE, MIENO
Executed: 2010-03-18
Assignee
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
18 ZHANG JIANG ROAD, PUDONG NEW AREA, SHANGHAI, 201203, CHINA
Covered Property (1)
Method for Manufacturing Twin Bit Structure Cell with Hafnium Oxide and Nano-Crystalline Silicon Layer
Patent: 8,598,001 →
Application: 12/978,473 →
Publication: US 2011/0156129
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jan 14, 2013
From: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
To: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION; SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
Reel/Frame 029625/0763 →