IP Library › Assignment 025997/0346
Patent Assignment
Reel/Frame 025997/0346

Assignment of Assignor's Interest

Recorded: 2011-03-22 Pages: 2
Assignors
WATANABE, ATSUO
Executed: 2007-02-27
HONDA, MITSUTOSHI
Executed: 2007-02-27
ISHITSUKA, NORIO
Executed: 2008-02-28
ITO, MASAHIRO
Executed: 2007-02-27
TABATA, TOSHIHITO
Executed: 2007-02-27
KURITA, SHINICHI
Executed: 2007-02-27
KAMIOKA, HIDEKAZU
Executed: 2007-02-27
Assignee
HITACHI, LTD.
6-6, MARUNOUCHI 1-CHOME, CHIYODA-KU, TOKYO, JAPAN
Covered Property (1)
Dielectric Material Separated-Type, High Breakdown Voltage Semiconductor Circuit Device, and Production Method Thereof
Patent: 7,982,266 →
Application: 11/684,032 →
Publication: US 2007/0210408
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Nov 12, 2014
From: HITACHI, LTD.
To: HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
Reel/Frame 034153/0954 →
Change of Name Apr 30, 2025
From: HITACHI POWER SEMICONDUCTOR DEVICE LTD.
To: MINEBEA POWER SEMICONDUCTOR DEVICE INC.
Reel/Frame 071142/0232 →