IP Library Assignment 026816/0519
Patent Assignment
Reel/Frame 026816/0519

Assignment of Assignor's Interest

Recorded: 2011-08-26 Pages: 7
Assignors
MIIDA, TAKASHI
Executed: 2011-08-11
SHIROTA, RIICHIRO
Executed: 2011-08-12
ARAKAWA, HIDEKI
Executed: 2011-08-12
YANG, CHING SUNG
Executed: 2011-08-11
LIN, TZUNG LING
Executed: 2011-08-11
Assignees
POWERCHIP CORPORATION
21-3, SHINBASHI 6-CHOME, MINATO-KU, TOKYO, 105-0004, JAPAN
POWERCHIP TECHNOLOGY CORPORATION
NO. 12, LI-HSIN RD. 1, HSINCHU SCIENCE PARK, HSINCHU, TAIWAN
Covered Property (1)
Programming Method for Nand Flash Memory Device to Reduce Electrons in Channels
Patent: 8,599,614 →
Application: 13/203,612 →
Publication: US 2011/0310666
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jul 16, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049770/0101 →