Change of Name

Recorded: 2011-08-30 Received: 2011-08-30 Pages: 18

Assignor

Executed: 2001-03-29

Assignee

HYNIX SEMICONDUCTOR INC.

SAN 136-1, AMI-RI, BUBAL-EUP, ICHEON-SHI, KYOUNGKI-DO, KRX, KOREA, REPUBLIC OF

Covered Properties (8)

Gate Structure with High K Dielectric

Application: 10/298,564 →

Capacitor for Semiconductor Memory Device

Application: 10/013,402 →

Stackable Ball Grid Array Semiconductor Package and Fabrication Method Thereof

Application: 09/922,103 →

Delay Locked Loop Incorporating a Ring Type Delay and Counting Elements

Application: 09/888,905 →

Method for Making High K Dielectric Gate for Semiconductor Device

Application: 09/883,188 →

Semiconductor device and method for fabricating the same

Application: 09/867,584 →

Method for forming a gate electrode on a semiconductor substrate

Application: 09/798,942 →

Method for Fabricating Semiconductor Device Having a Capacitor

Application: 09/751,842 →