IP Library › Granted Patent US 6,306,743
Granted Patent Utility
US 6,306,743 · Confirmation No. 2434

Method for forming a gate electrode on a semiconductor substrate

Inventor: Byung Hak Lee
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2015-03-25 SOL.NTC.SUIT Report on the filing or determination of an action regarding a patent 2 View
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2013-02-04 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
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2001-03-06 SPEC Specification 12 View
2001-03-06 CLM Claims 9 View
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2001-03-06 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,306,743
App. No.
09/798,942
Filed
2001-03-06
Granted
2001-10-23
Art Unit
2812
PTA
0 days