Assignment of Assignor's Interest

Recorded: 2011-12-20 Pages: 3

Assignors

JUNG, DONG HA

Executed: 2011-12-15

JIN, GYU AN

Executed: 2011-12-15

MIN, SU RYUN

Executed: 2011-12-15

Assignee

HYNIX SEMICONDUCTOR INC.

SAN 136-1, AMI-RI, BUBAL-EUB, ICHON-SHI, GYEONGGI-DO, 467-860, KOREA, REPUBLIC OF

Covered Property (1)

Method for Fabricating Magnetic Tunnel Junction

Patent: 8,685,757 →

Application: 13/331,546 →

Publication: US 2012/0187510

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.