IP Library Assignment 027773/0321
Patent Assignment
Reel/Frame 027773/0321

Assignment of Assignor's Interest

Recorded: 2012-02-28 Pages: 3
Assignor
HEBRAS, XAVIER
Executed: 2006-08-16
Assignee
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
PARC TECHNOLOGIQUE DES FONTAINES, CHEMIN DES FRANQUES, 38190 BERNIN, FRANCE
Covered Property (1)
Methods of Forming a Layer of Material on a Substrate and Structures Formed Therefrom
Patent: 8,212,249 →
Application: 12/535,056 →
Publication: US 2010/0044706
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Mar 1, 2012
From: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
To: SOITEC
Reel/Frame 027793/0535 →