IP Library Assignment 027793/0535
Patent Assignment
Reel/Frame 027793/0535

Change of Name

Recorded: 2012-03-01 Pages: 7
Assignor
Assignee
SOITEC
PARC TECHNOLOGIQUE DES FONTAINES, CHEMIN DES FRANQUES, 38190 BERNIN, FRANCE
Covered Properties (15)
Method of Fabricating Soi Wafer by Hydrogen Ion Delamination Method and Soi Wafer Fabricated by the Method
Patent: 6,372,609 →
Application: 09/555,687 →
Forming Structures That Include a Relaxed or Pseudo-Relaxed Layer on a Substrate
Patent: 7,018,909 →
Application: 10/784,016 →
Publication: US 2004/0195656
Forming Structures That Include a Relaxed or Pseudo-Relaxed Layer on a Substrate
Patent: 7,736,988 →
Application: 11/345,495 →
Publication: US 2006/0128117
Process and Equipment for Bonding by Molecular Adhesion
Patent: 7,601,271 →
Application: 11/357,771 →
Publication: US 2007/0119812
Methods of Forming a Layer of Material on a Substrate and Structures Formed Therefrom
Patent: 7,585,749 →
Application: 11/504,256 →
Publication: US 2007/0210307
Process for Fabricating a Structure for Epitaxy Without an Exclusion Zone
Patent: 7,902,045 →
Application: 12/134,019 →
Publication: US 2008/0303118
Equipment for Bonding by Molecular Adhesion
Patent: 8,091,601 →
Application: 12/489,800 →
Publication: US 2009/0294072
Process for Bonding by Molecular Adhesion
Patent: 8,158,013 →
Application: 12/490,132 →
Publication: US 2009/0261064
Methods of Forming a Layer of Material on a Substrate and Structures Formed Therefrom
Patent: 8,212,249 →
Application: 12/535,056 →
Publication: US 2010/0044706
Method of Fabricating an Epitaxially Grown Layer on a Composite Structure
Patent: 8,153,500 →
Application: 12/663,696 →
Publication: US 2010/0178749
Transfer of High Temperature Wafers
Patent: 8,153,536 →
Application: 12/678,466 →
Publication: US 2010/0216316
Forming Structures That Include a Relaxed or Pseudo-Relaxed Layer on a Substrate
Patent: 7,919,393 →
Application: 12/769,299 →
Publication: US 2010/0210090
Oxidation After Oxide Dissolution
Patent: 8,148,242 →
Application: 12/811,210 →
Publication: US 2010/0283118
Annealing Process for Annealing a Structure
Patent: 8,158,487 →
Application: 13/011,267 →
Publication: US 2011/0183495
Forming Structures That Include a Relaxed or Pseudo-Relaxed Layer on a Substrate
Patent: 8,173,512 →
Application: 13/080,436 →
Publication: US 2011/0217825
Related Assignments (13)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Jun 2, 2000
From: AGA, HIROJI; TATE, NAOTO; MITANI, KIYOSHI
To: SHIN-ETSU HANDOTAI CO., LTD.; SOITEC S.A.
Reel/Frame 010888/0780 →
Correction of Previously Recorded Assignment Dec 28, 2000
From: AGA, HIROJI; TATE, NAOTO; MITANI, KIYOSHI
To: SHIN-ETSU HANDOTAI CO., LTD.; S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 011395/0213 →
Assignment of Assignor's Interest Jun 3, 2004
From: GHYSELEN, BRUNO; MAZURE, CARLOS; ARENE, EMMANUEL
To: S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
Reel/Frame 014687/0073 →
Assignment of Assignor's Interest Apr 10, 2006
From: KERDILES, SEBASTIEN; DURET, CARINE; VAUFREDAZ, ALEXANDRE; METRAL, FREDERIC
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
Reel/Frame 017447/0676 →
Assignment of Assignor's Interest Sep 21, 2006
From: HEBRAS, XAVIER
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
Reel/Frame 018284/0325 →
Assignment of Assignor's Interest Aug 14, 2008
From: ARENA, CHANTAL; LETERTRE, FABRICE
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 021388/0637 →
Assignment of Assignor's Interest Apr 9, 2010
From: FAURE, BRUCE; MARCOVECCHIO, ALEXANDRA
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 024214/0447 →
Assignment of Assignor's Interest May 20, 2010
From: TISCHLER, MICHAEL ALBERT; BERTRAM, RONALD THOMAS, JR.
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 024419/0057 →
Assignment of Assignor's Interest Aug 5, 2010
From: KONONCHUK, OLEG; CELLER, GEORGE K.
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 024798/0303 →
Assignment of Assignor's Interest Feb 15, 2011
From: SOUSBIE, NICOLAS; ASPAR, BERNARD; BARGE, THIERRY; LAGAHE BLANCHARD, CHRYSTELLE
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 025808/0801 →
Assignment of Assignor's Interest Nov 2, 2011
From: KERDILES, SEBASTIEN; DURET, CARINE; VAUFREDAZ, ALEXANDRE; METRAL, FREDERIC
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 027165/0612 →
Assignment of Assignor's Interest Feb 28, 2012
From: HEBRAS, XAVIER
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 027773/0321 →
Assignment of Assignor's Interest Feb 28, 2012
From: GHYSELEN, BRUNO; MAZURE, CARLOS; ARENE, EMMANUEL
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 027772/0620 →