Patent Assignment
Reel/Frame 010888/0780
Assignment of Assignor's Interest
Recorded: 2000-06-02
Pages: 2
Assignors
AGA, HIROJI
Executed: 2000-04-12
TATE, NAOTO
Executed: 2000-04-12
MITANI, KIYOSHI
Executed: 2000-04-12
Assignees
SHIN-ETSU HANDOTAI CO., LTD.
4-2, MARUNOUCHI 1-CHOME, CHIYODA-KU, TOKYO, JAPAN
SOITEC S.A.
PARC TECHNOLOGIQUE DES FOINTAINES, F-38190 BERNIN, FRANCE
Covered Property
(1)
Method of Fabricating Soi Wafer by Hydrogen Ion Delamination Method and Soi Wafer Fabricated by the Method
Patent:
6,372,609 →
Application:
09/555,687 →
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.
Correction of Previously Recorded Assignment
Dec 28, 2000
From: AGA, HIROJI; TATE, NAOTO; MITANI, KIYOSHI
To: SHIN-ETSU HANDOTAI CO., LTD.; S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
Reel/Frame 011395/0213 →
Change of Name
Mar 1, 2012
From: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
To: SOITEC
Reel/Frame 027793/0535 →