IP Library › Assignment 011395/0213
Patent Assignment
Reel/Frame 011395/0213

Correction of Previously Recorded Assignment

Recorded: 2000-12-28 Pages: 2
Assignors
AGA, HIROJI
Executed: 2000-04-12
TATE, NAOTO
Executed: 2000-04-12
MITANI, KIYOSHI
Executed: 2000-04-12
Assignees
SHIN-ETSU HANDOTAI CO., LTD.
4-2, MARUNOUCHI 1-CHOME, CHIYODA-KU, TOKYO, JAPAN
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
PARC TECHNOLOGIQUE DES FONTAINES, F-38190 BERNIN, FRANCE
Covered Property (1)
Method of Fabricating Soi Wafer by Hydrogen Ion Delamination Method and Soi Wafer Fabricated by the Method
Patent: 6,372,609 →
Application: 09/555,687 →
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jun 2, 2000
From: AGA, HIROJI; TATE, NAOTO; MITANI, KIYOSHI
To: SHIN-ETSU HANDOTAI CO., LTD.; SOITEC S.A.
Reel/Frame 010888/0780 →
Change of Name Mar 1, 2012
From: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES
To: SOITEC
Reel/Frame 027793/0535 →