Patent Assignment
Reel/Frame 027786/0042
Assignment of Assignor's Interest
Recorded: 2012-02-29
Pages: 4
Assignors
MALEVILLE, CHRISTOPHE
Executed: 2003-10-15
NEYRET, ERIC
Executed: 2003-10-13
BEN MOHAMED, NADIA
Executed: 2003-10-15
Assignee
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
PARC TECHNOLOGIQUE DES FONTAINES, CHEMIN DES FRANQUES, F-38190 BERNIN, FRANCE
Covered Property
(1)
Method for Producing an Useful Layer on a Substrate by Sequentially Implanting Helium and Then Hydrogen Species into a Donor Substrate Followed by Thermal Treatment Process After Detaching the Useful Layer from Donor Substrate.
Application:
11/446,357 →
Publication:
US 2006/0223283
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.