IP Library Assignment 029000/0627
Patent Assignment
Reel/Frame 029000/0627

Assignment of Assignor's Interest

Recorded: 2012-09-21 Pages: 3
Assignors
WATANABE, MASAHIRO
Executed: 2012-09-10
MASHIYAMA, MITSUO
Executed: 2012-09-10
HANDA, TAKUYA
Executed: 2012-09-10
OKAZAKI, KENICHI
Executed: 2012-09-10
Assignee
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
398, HASE, ATSUGI-SHI, KANAGAWA-KEN, 243-0036, JAPAN
Covered Property (1)
Method for Manufacturing Semiconductor Device Including First Metal Oxide Layer and Second Metal Oxide Layer
Patent: 9,142,681 →
Application: 13/623,913 →
Publication: US 2013/0075735