IP Library Assignment 030950/0645
Patent Assignment
Reel/Frame 030950/0645

Assignment of Assignor's Interest

Recorded: 2013-08-06 Pages: 4
Assignors
TAKAHATA, MASAHIRO
Executed: 2013-07-29
SATOH, KAZUYUKI
Executed: 2013-07-29
NARITA, SATOYASU
Executed: 2013-07-29
GOHARA, TAKESHI
Executed: 2013-07-29
Assignee
JX NIPPON MINING & METALS CORPORATION
6-3, OTEMACHI 2-CHOME, CHIYODA-KU, TOKYO, 100-8164, JAPAN
Covered Property (1)
Method for Producing High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Formed from High-Purity Lanthanum, and Metal Gate Film Having Highy-Purity Lanthanum as Main Component
Patent: 9,013,009 →
Application: 13/980,072 →
Publication: US 2013/0313659
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Address Feb 7, 2017
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 041649/0733 →
Change of Address Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →