Assignment of Assignor's Interest

Recorded: 2013-09-11 Pages: 2

Assignor

UENO, KATSUNORI

Executed: 2013-08-01

Assignee

4-3, OKANO 2-CHOME, NISHI-KU, YOKOHAMA-SHI, KANAGAWA, 220-0073, JAPAN

Covered Property (1)

Gallium Nitride Hemt Device with a Mosfet in Series Coupled to Diodes for Protection of High-Voltage

Patent: 9,431,391 →

Application: 14/023,797 →

Publication: US 2014/0346570

Related Assignments (2)

Other recorded transfers of the patent in this record — the chain of ownership.