Patent Assignment
Reel/Frame 068606/0107
Nunc Pro Tunc Assignment
Recorded: 2024-09-17
Pages: 4
Assignor
FURUKAWA ELECTRIC CO., LTD.
Executed: 2024-08-06
Assignee
FUJI ELECTRIC CO., LTD.
1-1, TANABESHINDEN, KAWASAKI-KU, KAWASAKI-SHI, 210-9530, JAPAN
Covered Properties
(4)
Semiconductor Device
Nitride Semiconductor Device
Gallium Nitride Hemt Device with a Mosfet in Series Coupled to Diodes for Protection of High-Voltage
Semiconductor Multi-Layer Substrate, Semiconductor Device, and Method for Manufacturing the Same
Related Assignments
(6)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jul 9, 2013
From: IKURA, YOSHIHIRO
To: ADVANCED POWER DEVICE RESEARCH ASSOCIATION
Reel/Frame 030759/0371 →
Assignment of Assignor's Interest
Jul 10, 2013
From: UENO, KATSUNORI; KAYA, SHUSUKE
To: ADVANCED POWER DEVICE RESEARCH ASSOCIATION
Reel/Frame 030770/0733 →
Assignment of Assignor's Interest
Sep 11, 2013
From: UENO, KATSUNORI
To: ADVANCED POWER DEVICE RESEARCH ASSOCIATION
Reel/Frame 031184/0497 →
Assignment of Assignor's Interest
Feb 12, 2014
From: ADVANCED POWER DEVICE RESEARCH ASSOCIATION
To: FURUKAWA ELECTRIC CO., LTD.; FUJI ELECTRIC CO., LTD.
Reel/Frame 032202/0112 →
Assignment of Assignor's Interest
Apr 23, 2014
From: ADVANCED POWER DEVICE RESEARCH ASSOCIATION
To: FURUKAWA ELECTRIC CO., LTD.; FUJI ELECTRIC CO., LTD.
Reel/Frame 032738/0221 →
Assignment of Assignor's Interest
Sep 10, 2014
From: UMENO, KAZUYUKI; SHINAGAWA, TATSUYUKI; TAKAKI, KEISHI; TAMURA, RYOSUKE
To: FURUKAWA ELECTRIC CO., LTD.; FUJI ELECTRIC CO., LTD.
Reel/Frame 033713/0393 →