Semiconductor multi-layer substrate, semiconductor device, and method for manufacturing the same
A semiconductor multi-layer substrate includes a substrate made of Si and a multi-layer semiconductor layer. The multi-layer semiconductor layer includes an active layer made of a nitride semiconductor, a first warp control layer being formed between the substrate and the active layer and giving a predetermined warp to the substrate, and a second warp control layer made of a nitride semiconductor of which amount of an increase in a warp per a unit thickness is smaller than an amount of increase in the warp per a unit thickness of the first warp control layer. A total thickness of the multi-layer semiconductor layer is equal to or larger than 4 μm.
1. A semiconductor multi-layer substrate comprising:
a substrate made of Si; and
a multi-layer semiconductor layer, wherein
the multi-layer semiconductor layer includes:
an active layer made of a nitride semiconductor;
a first warp control layer being formed between the substrate and the active layer and giving a first predetermined warp to the substrate; and
a second warp control layer made of a nitride semiconductor and giving a second predetermined warp to the substrate,
the second predetermined warp given to the substrate is less than the first predetermined warp given to the substrate,
a total thickness of the multi-layer semiconductor layer is equal to or larger than 4 μm, and
the first warp control layer has a structure in which an Al x Ga 1-x N layer which is thick to a degree that a quantum size effect is not produced and an Al y Ga 1-y N layer (x>y) which is thick to a degree that a quantum size effect is not produced are layered repeatedly a plurality of times, and an AlGaN layer is provided at interfaces between each of the Al x Ga 1-x N layers and each of the Al y Ga 1-y N layers, and Al compositions of the AlGaN layers vary gradedly and stepwise or continuously between x and y.
2. The semiconductor multi-layer substrate according to claim 1 , wherein a ratio of thicknesses of the active layer, the second warp control layer, and the first warp control layer relative to a total thickness of the multi-layer semiconductor layer of the semiconductor multi-layer substrate is 1:2:2 or the thicknesses are within a range of ±0.4 μm from the ratio.
3. The semiconductor multi-layer substrate according to claim 1 , wherein a crack is prevented from being produced in an area not including a 10 mm width of area from an outer periphery portion of the semiconductor multi-layer substrate.
4. The semiconductor multi-layer substrate according to claim 1 , wherein the first warp control layer has a structure in which an AlN layer of which thickness is 20 nm to 100 nm and a GaN layer of which thickness is 100 nm to 1000 nm are layered repeatedly a plurality of times, and an AlGaN layer is provided at interfaces between each the AlN layers and each the GaN layers, and Al compositions of the AlGaN layers varies gradedly and stepwise or continuously.
5. The semiconductor multi-layer substrate according to claim 1 , wherein
the second warp control layer is made by layering a Al u Ga 1-u N layer of which thickness is 1 nm to 10 nm and an Al v Ga 1-v N layer (v<u) of which thickness is 4 nm to 25 nm,
the Al u Ga 1-u N layer is thin to a degree that a quantum size effect is produced, and
the Al y Ga 1-y N layer is thin to a degree that a film quantum size effect is produced repeatedly a plurality of times.
6. The semiconductor multi-layer substrate according to claim 1 , wherein
the second warp control layer is made by layering an Al u Ga 1-u N layer of which thickness is 1 nm to 10 nm and an Al v Ga 1-v N layer (v<u) of which thickness is 4 nm to 25 nm,
the Al u Ga 1-u N layer is thin to a degree that a quantum size effect is produced,
the Al v Ga 1-v N layer is thin to a degree that a film quantum size effect is produced repeatedly a plurality of times, and
a layer, of which Al composition vary between v and u gradedly and stepwise or continuously, are provided at interfaces between each of the Al u Ga 1-u N layers and each of the Al v Ga 1-v N layers.
7. The semiconductor multi-layer substrate according to claim 1 , wherein the second warp control layer has a structure in which an AlGaN graded layer of which Al composition increases from v to u stepwise or continuously and of which thickness is 1 nm to 25 nm and an AlGaN graded layer of which Al composition decreases from u to v stepwise or continuously and of which thickness is 1 nm to 25 nm are layered repeatedly a plurality of times.
8. The semiconductor multi-layer substrate according to claim 1 , wherein the second warp control layer has a structure in which AlGaN are layered so that Al compositions decrease in a direction toward a surface within a range of 25% to 100% of the Al composition.
9. The semiconductor multi-layer substrate according to claim 1 , wherein the active layer is made of GaN.
10. The semiconductor multi-layer substrate according to claim 9 , wherein a carbon concentration of the active layer is 1×10 16 cm −3 to 5×10 19 cm −3 , and the carbon concentration decreases closer to a surface.
11. The semiconductor multi-layer substrate according to claim 9 , wherein a thickness of an area of the active layer in which the carbon concentration is equal to or smaller than 1×10 17 cm −3 is equal to or larger than 100 nm.
12. The semiconductor multi-layer substrate according to claim 1 , wherein an average carbon concentrations of the first warp control layer and the second warp control layer are 0.5 to 5×10 19 cm −3 respectively.
13. The semiconductor multi-layer substrate according to claim 1 , further comprising a semiconductor layer or an insulating film being grown on the active layer and having a band gap which is larger than a band gap of the active layer, wherein the active layer is caused to produce a two-dimensional electron gas.
14. The semiconductor multi-layer substrate according to claim 1 , wherein a thickness of the substrate at a time of crystal growth is 525 μm to 1200 μm.
15. The semiconductor multi-layer substrate according to claim 1 , wherein a slip line is not produced on the substrate within an area between an outer periphery portion and a 20 mm width therefrom of the substrate.
16. The semiconductor multi-layer substrate according to claim 1 , wherein an oxygen concentration in the substrate is 11.5×10 17 cm −3 to 14.5×10 17 cm −3 .
17. The semiconductor multi-layer substrate according to claim 16 , wherein a difference of oxygen concentration in the substrate between a center portion and an outer periphery portion of the substrate is within 5%.
18. The semiconductor multi-layer substrate according to claim 1 , wherein the substrate does not have an orientation flat.
19. A semiconductor multi-layer substrate comprising:
a substrate made of Si; and
a multi-layer semiconductor layer, wherein
the multi-layer semiconductor layer includes:
a first warp control layer being made of a nitride semiconductor grown on the substrate and imparting a first predetermined warp to the substrate;
a second warp control layer made of a nitride semiconductor, grown on the first warp control layer, and imparting a second predetermined warp to the substrate; and
an active layer made of a nitride semiconductor grown on the second warp control layer,
the second predetermined warp imparted to the substrate is less than the first predetermined warp imparted to the substrate,
a total thickness of the multi-layer semiconductor layer is equal to or larger than 4 μm, and
the first warp control layer has a structure in which an Al x Ga 1-x N layer which is thick to a degree that a quantum size effect is not produced and an Al y Ga 1-y N layer (x>y) which is thick to a degree that a quantum size effect is not produced are layered repeatedly a plurality of times, and an AlGaN layer is provided at interfaces between each of the Al x Ga 1-x N layers and each of the Al y Ga 1-y N layers, and Al compositions of the AlGaN layers vary gradually and stepwise or continuously between x and y.
20. The semiconductor multi-layer substrate according to claim 19 , wherein a ratio of thicknesses of the active layer, the second warp control layer, and the first warp control layer relative to a total thickness of the multi-layer semiconductor layer of the semiconductor multi-layer substrate is 1:2:2 or the thicknesses are within a range of ±0.4 μm from the ratio.
21. The semiconductor multi-layer substrate according to claim 19 , wherein a crack is prevented from being produced in an area not including a 10 mm width of area from an outer periphery portion of the semiconductor multi-layer substrate.
22. The semiconductor multi-layer substrate according to claim 19 , wherein the first warp control layer has a structure in which an AlN layer of which thickness is 20 nm to 100 nm and a GaN layer of which thickness is 100 nm to 1000 nm are layered repeatedly a plurality of times, and an AlGaN layer is provided at interfaces between each the AlN layers and each the GaN layers, and Al compositions of the AlGaN layers varies gradually and stepwise or continuously.
23. The semiconductor multi-layer substrate according to claim 19 , wherein
the second warp control layer is made by layering a Al u Ga 1-u N layer of which thickness is 1 nm to 10 nm and an Al v Ga 1-v N layer (v<u) of which thickness is 4 nm to 25 nm,
the Al u Ga 1-u N layer is thin to a degree that a quantum size effect is produced, and
the Al v Ga 1-v N layer is thin to a degree that a quantum size effect is produced repeatedly a plurality of times.
24. The semiconductor multi-layer substrate according to claim 19 , wherein
the second warp control layer is made by layering an Al u Ga 1-u N layer of which thickness is 1 nm to 10 nm and an Al v Ga 1-v N layer (v<u) of which thickness is 4 nm to 25 nm,
the Al u Ga 1-u N layer is thin to a degree that a quantum size effect is produced,
the Al y Ga 1-y N layer is thin to a degree that a quantum size effect is produced repeatedly a plurality of times, and
a layer, of which Al composition vary between v and u gradually and stepwise or continuously, are provided at interfaces between each of the Al u Ga 1-u N layers and each of the Al v Ga 1-v N layers.
25. The semiconductor multi-layer substrate according to claim 19 , wherein the second warp control layer has a structure in which an AlGaN graded layer of which Al composition increases from v to u stepwise or continuously and of which thickness is 1 nm to 25 nm and an AlGaN graded layer of which Al composition decreases from u to v stepwise or continuously and of which thickness is 1 am to 25 nm are layered repeatedly a plurality of times.
26. The semiconductor multi-layer substrate according to claim 19 , wherein the second warp control layer has a structure in which AlGaN are layered so that Al compositions decrease in a direction toward a surface within a range of 25% to 100% of the Al composition.
27. The semiconductor multi-layer substrate according to claim 19 , wherein the active layer is made of GaN.
28. The semiconductor multi-layer substrate according to claim 27 , wherein a carbon concentration of the active layer is 1×10 16 cm −3 to 5×10 19 cm −3 , and the carbon concentration decreases closer to a surface.
29. The semiconductor multi-layer substrate according to claim 27 , wherein a thickness of an area of the active layer in which the carbon concentration is equal to or smaller than 1×10 17 cm −3 is equal to or larger than 100 nm.
30. The semiconductor multi-layer substrate according to claim 19 , wherein an average carbon concentrations of the first warp control layer and the second warp control layer are 0.5 to 5×10 19 cm −3 respectively.
31. The semiconductor multi-layer substrate according to claim 19 , further comprising a semiconductor layer or an insulating film being grown on the active layer and having a band gap which is larger than a band gap of the active layer, wherein the active layer is caused to produce a two-dimensional electron gas.
32. The semiconductor multi-layer substrate according to claim 19 , wherein a thickness of the substrate at a time of crystal growth is 525 μm to 1200 μm.
33. The semiconductor multi-layer substrate according to claim 19 , wherein a slip line is not produced on the substrate within an area between an outer periphery portion and a 20 mm width therefrom of the substrate.
34. The semiconductor multi-layer substrate according to claim 19 , wherein an oxygen concentration in the substrate is 11.5×10 17 cm −3 to 14.5×10 17 cm −3 .
35. The semiconductor multi-layer substrate according to claim 34 , wherein a difference of oxygen concentration in the substrate between a center portion and an outer periphery portion of the substrate is within 5%.
36. The semiconductor multi-layer substrate according to claim 19 , wherein the substrate does not have an orientation flat.
37. A semiconductor multi-layer substrate comprising:
a substrate made of Si; and
a multi-layer semiconductor layer, wherein
the multi-layer semiconductor layer includes:
an active layer made of a nitride semiconductor;
a first warp control layer being formed between the substrate and the active layer and giving a first predetermined warp to the substrate; and
a second warp control layer made of a nitride semiconductor and giving a second predetermined warp to the substrate,
the second predetermined warp given to the substrate is less than the first predetermined warp given to the substrate,
a total thickness of the multi-layer semiconductor layer is equal to or larger than 4 μm, and
the first warp control layer has a structure in which an AlN layer of which thickness is 20 nm to 100 nm and a GaN layer of which thickness is 100 nm to 1000 nm are layered repeatedly a plurality of times.
38. A semiconductor multi-layer substrate comprising:
a substrate made of Si; and
a multi-layer semiconductor layer, wherein
the multi-layer semiconductor layer includes:
a first warp control layer being made of a nitride semiconductor grown on the substrate and imparting a first predetermined warp to the substrate;
a second warp control layer made of a nitride semiconductor, grown on the first warp control layer, and imparting a second predetermined warp to the substrate; and
an active layer made of a nitride semiconductor grown on the second warp control layer,
the second predetermined warp imparted to the substrate is less than the first predetermined warp imparted to the substrate,
a total thickness of the multi-layer semiconductor layer is equal to or larger than 4 μm, and
the first warp control layer has a structure in which an AlN layer of which thickness is 20 nm to 100 nm and a GaN layer of which thickness is 100 nm to 1000 nm are layered repeatedly a plurality of times.