IP Library › Assignment 031831/0527
Patent Assignment
Reel/Frame 031831/0527

Assignment of Assignor's Interest

Recorded: 2013-12-20 Pages: 6
Assignors
KIM, YOUNG BAE
Executed: 2013-12-06
MOON, JIN WOO
Executed: 2013-12-06
HEBERT, FRANCOIS
Executed: 2013-12-03
Assignee
MAGNACHIP SEMICONDUCTOR, LTD.
1, HYANGJEONG-DONG, HEUNGDEOK-GU, CHEONGJU-SI, CHUNGCHEONGBUK-DO, 361-728, CHEONGJU-SI, KOREA, REPUBLIC OF
Covered Property (1)
Lateral Double-Diffused Mos Transistor Having Deeper Drain Region Than Source Region
Patent: 9,741,844 →
Application: 14/136,739 →
Publication: US 2014/0306285
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 3, 2020
From: MAGNACHIP SEMICONDUCTOR, LTD.
To: KEY FOUNDRY CO., LTD.
Reel/Frame 053703/0227 →
Change of Name Mar 12, 2024
From: KEY FOUNDRY CO., LTD.
To: SK KEYFOUNDRY INC.
Reel/Frame 066794/0290 →