Assignment of Assignor's Interest

Recorded: 2014-08-25 Pages: 3

Assignors

KUME, IPPEI

Executed: 2014-03-03

TAKEDA, HIROSHI

Executed: 2014-03-04

NAGUMO, TOSHIHARU

Executed: 2014-03-04

HASE, TAKASHI

Executed: 2014-03-05

Assignee

RENESAS ELECTRONICS CORPORATION

1753, SHIMONUMABE, NAKAHARA-KU,, KAWASAKI-SHI, KANAGAWA, JAPAN

Covered Property (1)

Semiconductor Device with Group-Iii Nitride Compound Semicoductor Layer on Substrate for Transistor

Patent: 9,231,105 →

Application: 14/464,912 →

Publication: US 2015/0060875

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.