Patent Assignment
Reel/Frame 036721/0745
Assignment of Assignor's Interest
Recorded: 2015-10-04
Pages: 3
Assignor
TAKAHASHI, TETSUO
Executed: 2015-07-06
Assignee
MITSUBISHI ELECTRIC CORPORATION
7-3, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, 20191, JAPAN
Covered Property
(1)
Power Semiconductor Device Having Trench Gate Type Igbt and Diode Regions