Patent Assignment
Reel/Frame 036724/0592
Assignment of Assignor's Interest
Recorded: 2015-09-30
Received: 2015-09-30
Pages: 151
Assignor
SPANSION, LLC
Executed: 2015-06-01
Assignee
CYPRESS SEMICONDUCTOR CORPORATION
198 CHAMPION COURT, SAN JOSE, CA, 95134, UNITED STATES
Covered Properties
(4)
Flash Memory Cells Having Trenched Storage Elements
Application:
14/254,237 →
System and Method for Manufacturing Self-Aligned Sti with Single Poly
Application:
14/167,845 →
Self-Aligned Si Rich Nitride Charge Trap Layer Isolation for Charge Trap Flash Memory
Application:
14/019,192 →
System for Programming a Phase Change Memory Device Including Providing a Second Erase Activation Energy Greater Than a First Erase Activation Energy That Corresponds to a Program Energy.
Application:
13/324,310 →