Patent Assignment
Reel/Frame 037495/0235
Assignment of Assignor's Interest
Recorded: 2016-01-14
Pages: 5
Assignors
LEE, KAI-HSUAN
Executed: 2015-12-21
SHEU, JYH-CHERNG
Executed: 2015-12-21
WANG, SUNG-LI
Executed: 2015-12-21
YANG, CHENG-YU
Executed: 2015-12-21
WANG, SHENG-CHEN
Executed: 2015-12-21
YEONG, SAI-HOOI
Executed: 2015-12-21
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
NO. 8, LI-HSIN RD. 6, HSINCHU SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, 300, TAIWAN
Covered Property
(1)
Semiconductor Device Having a Uniform and Thin Silicide Layer on an Epitaxial Source/ Drain Structure and Manufacturing Method Thereof