Patent Assignment
Reel/Frame 037668/0001
Assignment of Assignor's Interest
Recorded: 2016-02-04
Pages: 6
Assignee
SUMITOMO ELECTRIC INDUSTRIES, LTD.
5-33, KITAHAMA 4-CHOME, CHUO-KU, OSAKA-SHI, OSAKA, 541-0041, JAPAN
Covered Property
(1)
Silicon Carbide Semiconductor Substrate, Method for Manufacturing Silicon Carbide Semiconductor Substrate, and Method for Manufacturing Silicon Carbide Semiconductor Device Where Depression Supression Layer Is Formed on Backside Surface of Base Substrate Opposite to Main Surface on Which Epitaxial Layer Is Formed
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.